60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Rated to +175°C – Ideal for High Ambient Temperature Environments\nHigh Conversion Efficiency\nLow RDS(ON) – Minimizes On-State Losses\nLow Input Capacitance\nFast Switching Speed;

Diodes

美台半导体

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101 and supported by a PPAP. Rated to +175°C – Ideal for High Ambient Temperature Environments\nHigh Conversion Efficiency\nLow RDS(ON) – Minimizes On-State Losses\nLow Input Capacitance\nFast Switching Speed;

Diodes

美台半导体

60V 175?C N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP. •Rated to +175°C— Ideal for High Ambient Temperature Environments\n•100% Unclamped Inductive Switching (UIS) Test in Production — Ensures More Reliable and Robust End Application\n•Low RDS(ON)—Minimizes On State Losses\n•Low Input Capacitance\n•Fast Switching Speed\n•Wettable Flank for Improved;

Diodes

美台半导体