N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Switching • Synchronous Rectification • DC-DC Converters Features • Rated to +1

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DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Switching • Synchronous Rectification • DC-DC Converters Features • Rated to +1

文件：439.49 Kbytes 页数：7 Pages

DIODES

美台半导体

60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Rated to +175°C – Ideal for High Ambient Temperature Environments\n100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application\nThermally Efficient Package – Cooler Running Applications\nHigh Conversion Efficiency\nLow RDS(ON) – Minimizes On-State Losses\n<1.1mm Package;

Diodes

美台半导体

60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. •Rated to +175°C – Ideal for High Ambient TemperatureEnvironments\n•Ensures More Reliable and Robust End Application\n•Low Input Capacitance\n•Wettable Flank for Improved Optical Inspection\n•Halogen and Antimony Free. “Green” Device \n•For automotive applications requiring specific change control(i;

Diodes

美台半导体

60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP. •Rated to +175°C – Ideal for High Ambient TemperatureEnvironments\n•100% Unclamped Inductive Switching (UIS) Test in Production –\n•Ensures More Reliable and Robust End Application\n•Low RDS(ON) – Minimizes On State Losses\n•Low Input Capacitance\n•Fast Switching Speed\n•Wettable Flank for Impro;

Diodes

美台半导体