60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8

Features and Benefits  100 Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable And Robust End Application  Low RDS(ON) – Ensures On-State Losses are Minimized  Small Form Factor Thermally Efficient Package Enables Higher Density End Products  Occupies just 33 o

文件：542.17 Kbytes 页数：7 Pages

DIODES

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60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8

Features and Benefits  100 Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable And Robust End Application  Low RDS(ON) – Ensures On-State Losses are Minimized  Small Form Factor Thermally Efficient Package Enables Higher Density End Products  Occupies just 33 o

文件：542.17 Kbytes 页数：7 Pages

DIODES

美台半导体

60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8

Features and Benefits  100 Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable And Robust End Application  Low RDS(ON) – Ensures On-State Losses are Minimized  Small Form Factor Thermally Efficient Package Enables Higher Density End Products  Occupies just 33 o

文件：542.17 Kbytes 页数：7 Pages

DIODES

美台半导体

60V N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. •100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable And Robust End Application\n•Low RDS(ON) – Ensures On-State Losses are Minimized\n•Small Form Factor Thermally Efficient Package Enables Higher Density End Products\n•Occupies just 33% of the Board Area Occu;

Diodes

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