60V N-Channel Enhancement Mode MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON) ) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. •100% Unclamped Inductive Switching (UIS) Test in Production — Ensures More Reliable and Robust End Application\n•High Conversion Efficiency\n•Low RDS(ON) — Minimizes Power Losses\n•Low QG — Minimizes Switching Losses\n•Fast Switching Speed\n•Low Input Capacitance\n•Lead-Free Finish; RoHS Compli;

Diodes

美台半导体

TO-263AB

DIODES/美台

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TO-252-2(DPAK)

DIODES/美台

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PowerDI5060-8

DIODES/美台

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POWERDI506

DIODES/美台

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