50V N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.\n\n •100% Unclamped Inductive Switching (UIS) Test in Production— Ensures More Reliable and Robust End Application\n•Small Form Factor Thermally Efficient Package Enables Higher Density End Products\n•Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)\n•For automotive applications requiring spec;

Diodes

美台半导体

Ultra-Low-Power Digital-Latch Hall-Effect Sensor

文件：197.96 Kbytes 页数：20 Pages

TI

德州仪器

DRV5012 Ultra-Low-Power Digital-Latch Hall-Effect Sensor

1 Features 1• Industry-Leading Low-Power Consumption • Pin-Selectable Sampling Rate: – SEL = Low: 20 Hz Using 1.3 μA (1.8 V) – SEL = High: 2.5 kHz Using 142 μA (1.8 V) • 1.65- to 5.5-V Operating VCC Range • High Magnetic Sensitivity: ±2 mT (Typical) • Robust Hysteresis: 4 mT (Typical) • Pu

文件：957.54 Kbytes 页数：25 Pages

TI

德州仪器

Ultra-Low-Power Digital-Latch Hall-Effect Sensor

文件：197.96 Kbytes 页数：20 Pages

TI

德州仪器