P-Channel Enhancement Mode MOSFET

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. •100% Unclamped Inductive Switch (UIS) Test in Production\n•Fast Switching Speed\n•Halogen and Antimony Free. “Green” Device (Note 3)\n•An automotive-compliant part is available under separate datasheet (DMP4013SPSWQ);

Diodes

美台半导体

175°C 40V P-CHANNEL ENHANCEMENT MODE

Features and Benefits • Rated to +175°C – Ideal for High Ambient Temperature Environments • 100% Unclamped Inductive Switch (UIS) Test in Production • Low On-Resistance • Fast Switching Speed • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (N

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DIODES

美台半导体

1000Base-T Module

文件：23.95 Kbytes 页数：1 Pages

PCA

1000Base-T Module

文件：23.95 Kbytes 页数：1 Pages

PCA