N-CHANNEL ENHANCEMENT MODE MOSFET

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DIODES

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Fast Switching Speed

文件：512.309 Kbytes 页数：7 Pages

DIODES

美台半导体

Fast Switching Speed

文件：512.309 Kbytes 页数：7 Pages

DIODES

美台半导体

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch. Thermally Efficient Package – Cooler Running Applications\nHigh Conversion Efficiency\nLow RDS(ON) – Minimizes On-State Losses\nLow Input Capacitance\nFast Switching Speed\n<1.1mm Package Profile – Ideal for Thin Applications;

Diodes

美台半导体

60V 175°C N-Channel Enhancement Mode MOSFET

This new generation N-Channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switches. •Rated to +175°C – Ideal for High Ambient Temperature Environments\n•100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application\n•Thermally Efficient Package-Cooler Running Applications\n•High Conversion Efficiency\n•Low RDS(ON) – Minimizes On-State Losses\n•Low Input ;

Diodes

美台半导体

60V +175°C N-Channel Enhancement Mode MOSFE

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: motor controls, DC-DC converters, and power management.

Diodes

美台半导体