N-CHANNEL ENHANCEMENT MODE MOSFET

Features  N-Channel MOSFET  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected Gate 2KV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN33D8LTQ is suitable

文件：493.66 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：3LT；Package：SOT523；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  N-Channel MOSFET  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected Gate 2KV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN33D8LTQ is suitable

文件：493.66 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：3LT；Package：SOT523；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  N-Channel MOSFET  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected Gate 2KV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN33D8LTQ is suitable

文件：493.66 Kbytes 页数：6 Pages

DIODES

美台半导体

N-Channel 30-V(D-S) MOSFET

Features 1) Lowon-resistance. 2) Fast switching speed. 3)Lowvoltage drive (2.5V) makes this device idealfor portable equipment. 4) Drive circuits can be simple. 5) Paralel use is easy. B)ESD protected 2KV HBM Applications Interfacing, switching (30V, 100mA)

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TECHPUBLIC

台舟电子

Low On-Resistance

文件：294.76 Kbytes 页数：6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DIODES™ DMN33D8LVQ is suitable for automotive applications requiring specific

文件：611.73 Kbytes 页数：6 Pages

DIODES

美台半导体