20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low RDS(ON) – Ensures On State Losses are Minimized  Small Form Factor, Thermally Efficient Package Enables Higher Density End Products  Occupies Just 33 of the Board Area Occupied by SO-8 Enabling Smaller End Product  100 Unclamped Inductive Switching (UIS) Test in Production

文件：579.61 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：AT8；Package：PowerDI3333-8；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low RDS(ON) – Ensures On State Losses are Minimized  Small Form Factor, Thermally Efficient Package Enables Higher Density End Products  Occupies Just 33 of the Board Area Occupied by SO-8 Enabling Smaller End Product  100 Unclamped Inductive Switching (UIS) Test in Production

文件：579.61 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：AT8；Package：PowerDI3333-8；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low RDS(ON) – Ensures On State Losses are Minimized  Small Form Factor, Thermally Efficient Package Enables Higher Density End Products  Occupies Just 33 of the Board Area Occupied by SO-8 Enabling Smaller End Product  100 Unclamped Inductive Switching (UIS) Test in Production

文件：579.61 Kbytes 页数：8 Pages

DIODES

美台半导体

20V N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. •Low RDS(ON) – Ensures On State Losses are Minimized\n•Small Form Factor, Thermally Efficient Package Enables Higher Density End Products\n•Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product\n•100% Unclamped Inductive Switching (UIS) Test in Production – Ensure;

Diodes

美台半导体