N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low-Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2024UQ is suitable for automotive applications requiring specific change c

文件：595.78 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：05U；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low-Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2024UQ is suitable for automotive applications requiring specific change c

文件：595.78 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：05U；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low-Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2024UQ is suitable for automotive applications requiring specific change c

文件：595.78 Kbytes 页数：7 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which make it ideal for high-efficiency power management applications.\n\n •Low On-Resistance\n•Fast Switching Speed\n•Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)\n•The DMN2024UQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://ww;

Diodes

美台半导体