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DMN2015UFDE

20V N-CHANNEL ENHANCEMENT MODE MOSFET

文件:211.83 Kbytes 页数:6 Pages

DIODES

美台半导体

DMN2015UFDE_15

20V N-CHANNEL ENHANCEMENT MODE MOSFET

文件:526.48 Kbytes 页数:6 Pages

DIODES

美台半导体

DMN2015UFDE-13

20V N-CHANNEL ENHANCEMENT MODE MOSFET

文件:211.83 Kbytes 页数:6 Pages

DIODES

美台半导体

DMN2015UFDE-13

20V N-CHANNEL ENHANCEMENT MODE MOSFET

文件:526.48 Kbytes 页数:6 Pages

DIODES

美台半导体

DMN2015UFDE-7

20V N-CHANNEL ENHANCEMENT MODE MOSFET

文件:526.48 Kbytes 页数:6 Pages

DIODES

美台半导体

DMN2015UFDE-7

20V N-CHANNEL ENHANCEMENT MODE MOSFET

文件:211.83 Kbytes 页数:6 Pages

DIODES

美台半导体

DMN2015UFDE

N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation 20V N channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.

Diodes

美台半导体

技术参数

  • Automotive Compliant PPAP:

    On Request*

  • Polarity:

    N

  • ESD Diodes:

    Yes

  • VDS:

    20 V

  • VGS:

    12 ±V

  • IDS @ TA = +25°C:

    10.5 A

  • PD @ TA = +25°C:

    2.03 W

  • RDS(ON) Max @ VGS (10V):

    N/A mΩ

  • RDS(ON) Max @ VGS (4.5V):

    11.6 mΩ

  • RDS(ON) Max @ VGS (2.5V):

    15 mΩ

  • RDS(ON) Max @ VGS (1.8V):

    30 mΩ

  • VGS (th) Max:

    1.1 V

  • QG Typ @ VGS = 4.5V (nC):

    19.7 nC

  • QG Typ @ VGS = 10V (nC):

    45.6 nC

  • Packages:

    U-DFN2020-6 (Type E)

供应商型号品牌批号封装库存备注价格
DIODES/美台
24+
U-DFN2020-6
98000
原装现货假一罚十
询价
DIODES/美台
2447
SOT26
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
DIODES/美台
23+
U-DFN2020-6(TypeE)
12000
原装正品假一罚百!可开增票!
询价
DIODES/美台
22+
U-DFN2020-6(TypeE)
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
询价
DIODES
2015+
U-DFN20
995300
原装现货价格优势-含16%增值税
询价
SEMTECH
2016+
DFN
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
DiodesZetex
24+
NA
3000
进口原装正品优势供应
询价
BGA
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
DIDOSE
15+
DFN
24685
进口原盘现货/3K
询价
原装DIODES
19+
DFN2020
20000
询价
更多DMN2015UFDE供应商 更新时间2026-1-17 11:07:00