| 订购数量 | 价格 |
|---|---|
| 1+ | |
| 1000+ |
首页>DMG8601UFG>芯片详情
DMG8601UFG_DIODES/美台半导体_DUAL N-CHANNEL ENHANCEMENT MODE MOSFET川科3部
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 制造商编号
:DMG8601UFG
- 生产厂家
:达尔
- Automotive Compliant PPAP
:On Request*
- Polarity
:N+N
- ESD Diodes
:Yes
- VDS
:20 V
- VGS
:12 ±V
- IDS @ TA = +25°C
:6.1 A
- PD @ TA = +25°C
:0.92 W
- RDS(ON) Max @ VGS (10V)
:N/A mΩ
- RDS(ON) Max @ VGS (4.5V)
:23 mΩ
- RDS(ON) Max @ VGS (2.5V)
:27 mΩ
- RDS(ON) Max @ VGS (1.8V)
:34 mΩ
- VGS (th) Max
:1.05 V
- QG Typ @ VGS = 4.5V (nC)
:8.8 nC
- QG Typ @ VGS = 10V (nC)
:N/A nC
- Packages
:U-DFN3030-8
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