| 订购数量 | 价格 |
|---|---|
| 1+ | |
| 1000+ |
首页>DMG7N65SJ3>芯片详情
DMG7N65SJ3_DIODES/美台半导体_N-CHANNEL ENHANCEMENT MODE MOSFET川科2部
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 制造商编号
:DMG7N65SJ3
- 生产厂家
:达尔
- Automotive Compliant PPAP
:No
- Polarity
:N
- ESD Diodes
:No
- VDS
:659 V
- VGS
:30 ±V
- IDS @ TA = +25°C
:N/A A
- PD @ TA = +25°C
:70 W
- RDS(ON) Max @ VGS (10V)
:1400 mΩ
- RDS(ON) Max @ VGS (4.5V)
:N/A mΩ
- RDS(ON) Max @ VGS (2.5V)
:N/A mΩ
- RDS(ON) Max @ VGS (1.8V)
:N/A mΩ
- VGS (th) Max
:4 V
- QG Typ @ VGS = 4.5V (nC)
:N/A nC
- QG Typ @ VGS = 10V (nC)
:25 nC
- Packages
:TO251 (Type TH)
供应商
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