COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

文件：272.05 Kbytes 页数：10 Pages

DIODES

美台半导体

N- and P-Channel V (D-S) MOSFET

文件：1.1316 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

文件：272.05 Kbytes 页数：10 Pages

DIODES

美台半导体

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

文件：272.05 Kbytes 页数：10 Pages

DIODES

美台半导体

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

文件：561.23 Kbytes 页数：10 Pages

DIODES

美台半导体

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

文件：561.23 Kbytes 页数：10 Pages

DIODES

美台半导体

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

文件：561.23 Kbytes 页数：10 Pages

DIODES

美台半导体

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

文件：561.23 Kbytes 页数：10 Pages

DIODES

美台半导体

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

This new generation 30V N +P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld application.

Diodes

美台半导体

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Low On-Resistance\nLow Input Capacitance\nFast Switching Speed\nLow Input/Output Leakage\nTotally Lead-Free & Fully RoHS Compliant \nHalogen and Antimony Free. “Green” Device \nQualified to AEC-Q101 Standards for High Reliability\nPPAP Capable;

Diodes

美台半导体