DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change con

文件：549.33 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：P5W；Package：SOT363；DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change con

文件：549.33 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：P5W；Package：SOT363；DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change con

文件：549.33 Kbytes 页数：7 Pages

DIODES

美台半导体

Dual P-Channel Enhancement Mode MOSFET

Application « Battery protection « Load switch « Power management « Power Supply Converter Circuits

文件：2.5901 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. •Low On-Resistance\n•Low Input Capacitance\n•ESD Protected\n•Halogen and Antimony Free. “Green” Device (Note 3)\n•For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q101, PPAP capable, andmanufactured in IATF 16949 certified facilities), please contact us or y;

Diodes

美台半导体