OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET

•Suitable for broad band applications\n• Simple bias circuits\n• Ultra-low thermal resistance\n• BeO free, Low C(rss)\n• High gain - 13 dB minimum;

TT Electronics

ROHS COMPLIANT METAL GATE RF SILICON FET

文件：87.05 Kbytes 页数：5 Pages

SEME-LAB

SINGLE CHANNEL SMART LOAD SWITCH

Features  Low RDS(ON)—Ensures On-State Losses are Minimized  0.8V to VVBIAS-1.5V Input Voltage Range  6A Continuous Current  Low RDS(ON) Internal NFETs 8mΩ at VBIAS = 5V, VIN = 1.05V, TA = +85°C  35μA Low Quiescent Current  10μs Turn on Rise Time  3.2V to 5.5V Bias Voltage  Integr

文件：1.05765 Mbytes 页数：11 Pages

DIODES

美台半导体

CAPACITORS 5mm BOX POLYESTER DMP

文件：151.82 Kbytes 页数：2 Pages

DUBILIER

CAPACITORS 5mm BOX POLYESTER DMP

文件：151.82 Kbytes 页数：2 Pages

DUBILIER