DMN2004K

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisnewgenerationMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance:RDS(on)=550(max)mΩ@VGS=4.5V

DMN2004K

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DMN2004TK

N-CHANNELENHANCEMENTMODEMOSFET

DMN2004VK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •Ultra-SmallSurfaceMountPackage •ESDProtectedGate •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”D

DMN2004VK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DMN2004WK

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowOn-Resistance:RDS(ON) •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •ESDProtectedupto2KV •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qu

DMN2004WK

N-CHANNELENHANCEMENTMODEMOSFET

DMN2004WK

N-ChannelEnhancementModeMOSFET

DMN2004WKQ

N-CHANNELENHANCEMENTMODEMOSFET

DMP2004DMK

DUALP-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR