PGA849

PGA849Low-Noise,Wide-Bandwidth,PrecisionProgrammableGainInstrumentationAmplifier

1Features •Differentialtosingle-endedconversion •Eightpin-programmablebinarygains –G(V/V)=⅛,¼,½,1,2,4,8,and16 •Lowgainerrordrift:2ppm/°C(max) •Fastersignalprocessing: –Widebandwidth:10MHzatallgains –Highslewrate:35V/μs –Settlingtime: 500nsto0.01

S849T

MOSMICforTV-TunerPrestagewith12VSupplyVoltage

Features ●Integratedgateprotectiondiodes ●Lownoisefigure ●Highgain ●Biasingnetworkonchip ●Improvedcrossmodulationatgainreduction ●HighAGC-range ●SMDpackage Applications  LownoisegaincontrolledinputstagesinUHF-andVHF-tunerwith12Vsupplyvoltage.

S849TR

MOSMICforTV-TunerPrestagewith12VSupplyVoltage

Features ●Integratedgateprotectiondiodes ●Lownoisefigure ●Highgain ●Biasingnetworkonchip ●Improvedcrossmodulationatgainreduction ●HighAGC-range ●SMDpackage Applications  LownoisegaincontrolledinputstagesinUHF-andVHF-tunerwith12Vsupplyvoltage.

TS849LF

INSULATIONTRANSFORMERFOR10BASE-T

TSD-849

SWITCHMODEDC/DCPOWERCONVERSIONTRANSFORMERS

XINA849DGKR

INA849Ultra-Low-Noise(1nV/?숰z),High-Bandwidth,InstrumentationAmplifier

XINA849DR

INA849Ultra-Low-Noise(1nV/?숰z),High-Bandwidth,InstrumentationAmplifier

XPGA849RGTR

PGA849Low-Noise,Wide-Bandwidth,PrecisionProgrammableGainInstrumentationAmplifier

1Features •Differentialtosingle-endedconversion •Eightpin-programmablebinarygains –G(V/V)=⅛,¼,½,1,2,4,8,and16 •Lowgainerrordrift:2ppm/°C(max) •Fastersignalprocessing: –Widebandwidth:10MHzatallgains –Highslewrate:35V/μs –Settlingtime: 500nsto0.01

ZTX849

NPNSILICONPLANARMEDIUMPOWER

FEATURES *5Ampscontinuouscurrent *Upto20Ampspeakcurrent *Verylowsaturationvoltages APPLICATIONS *LCDbacklightconverter *Flashgunconverters *Batterypoweredcircuits *Motordrivers

ZTX849

NPNSILICONPLANARMEDIUMPOWERHIGHCURRENTTRANSISTOR

FEATURES *5Ampscontinuouscurrent *Upto20Ampspeakcurrent *Verylowsaturationvoltages APPLICATIONS *LCDbacklightconverter *Flashgunconverters *Batterypoweredcircuits *Motordrivers

ZTX849STOB

NPNSILICONPLANARMEDIUMPOWERHIGHCURRENTTRANSISTOR

FEATURES *5Ampscontinuouscurrent *Upto20Ampspeakcurrent *Verylowsaturationvoltages APPLICATIONS *LCDbacklightconverter *Flashgunconverters *Batterypoweredcircuits *Motordrivers

ZXT849K

30VNPNLOWSATURATIONTRANSISTORIND-PAK

Features •BVCEO>30V •IC=7AHighContinuousCollectorCurrent •ICM=20APeakPulseCurrent •RCE(SAT)=33mΩforLowEquivalentOn-Resistance •hFESpecifiedUpto20AforaHighGainHoldUp •LowSaturationVoltages •Lead-FreeFinish;RoHSCompliant(Notes1&2) •Halogenan

ZXT849K

30VNPNLOWSATURATIONTRANSISTORIND-PAK

DESCRIPTION PackagedintheD-Pakoutlinethishighcurrenthighperformance30VNPNtransistorofferslowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. FEATURES •7ampscontinuouscurrent •Upto20ampspeakcurrent •Lowequi

ZXT849K

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=30V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat)=240mV(Max)@IC=7A APPLICATIONS ·Designedforpoweramplifier,highspeedswitchingand regulatedpowersupplyapplications.

ZXT849KTC

30VNPNLOWSATURATIONTRANSISTORIND-PAK

DESCRIPTION PackagedintheD-Pakoutlinethishighcurrenthighperformance30VNPNtransistorofferslowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. FEATURES •7ampscontinuouscurrent •Upto20ampspeakcurrent •Lowequi

ZXT849KTC

30VNPNLOWSATURATIONTRANSISTORIND-PAK

Features •BVCEO>30V •IC=7AHighContinuousCollectorCurrent •ICM=20APeakPulseCurrent •RCE(SAT)=33mΩforLowEquivalentOn-Resistance •hFESpecifiedUpto20AforaHighGainHoldUp •LowSaturationVoltages •Lead-FreeFinish;RoHSCompliant(Notes1&2) •Halogenan