TS849LF

INSULATION TRANSFORMER FOR 10BASE-T

TSD-849

SWITCHMODEDC/DCPOWERCONVERSIONTRANSFORMERS

XINA849DGKR

INA849Ultra-Low-Noise(1nV/?숰z),High-Bandwidth,InstrumentationAmplifier

XINA849DR

INA849Ultra-Low-Noise(1nV/?숰z),High-Bandwidth,InstrumentationAmplifier

XPGA849RGTR

PGA849Low-Noise,Wide-Bandwidth,PrecisionProgrammableGainInstrumentationAmplifier

1Features •Differentialtosingle-endedconversion •Eightpin-programmablebinarygains –G(V/V)=⅛,¼,½,1,2,4,8,and16 •Lowgainerrordrift:±2ppm/°C(maximum) •Fastersignalprocessing: –Widebandwidth:10MHzatallgains –Highslewrate:35V/μsatG≥½V/V –Settlingti

XPGA849RGTR

PGA849Low-Noise,Wide-Bandwidth,PrecisionProgrammableGainInstrumentationAmplifier

1Features •Differentialtosingle-endedconversion •Eightpin-programmablebinarygains –G(V/V)=⅛,¼,½,1,2,4,8,and16 •Lowgainerrordrift:2ppm/°C(max) •Fastersignalprocessing: –Widebandwidth:10MHzatallgains –Highslewrate:35V/μs –Settlingtime: 500nsto0.01

ZTX849

NPNSILICONPLANARMEDIUMPOWER

FEATURES *5Ampscontinuouscurrent *Upto20Ampspeakcurrent *Verylowsaturationvoltages APPLICATIONS *LCDbacklightconverter *Flashgunconverters *Batterypoweredcircuits *Motordrivers

ZTX849

NPNSILICONPLANARMEDIUMPOWERHIGHCURRENTTRANSISTOR

FEATURES *5Ampscontinuouscurrent *Upto20Ampspeakcurrent *Verylowsaturationvoltages APPLICATIONS *LCDbacklightconverter *Flashgunconverters *Batterypoweredcircuits *Motordrivers

ZTX849STOB

NPNSILICONPLANARMEDIUMPOWERHIGHCURRENTTRANSISTOR

FEATURES *5Ampscontinuouscurrent *Upto20Ampspeakcurrent *Verylowsaturationvoltages APPLICATIONS *LCDbacklightconverter *Flashgunconverters *Batterypoweredcircuits *Motordrivers

ZXT849K

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=30V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat)=240mV(Max)@IC=7A APPLICATIONS ·Designedforpoweramplifier,highspeedswitchingand regulatedpowersupplyapplications.