MOSFET 2N-CH 30V 3.7A 8-SOIC

Diodes

美台半导体

包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET 2N-CH 30V 3.7A 8-SOIC

PAM

龙鼎微

Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：107.92 Kbytes 页数：7 Pages

IRF

30V 2N-Channel MOSFET

Features Generation V Technology Ultra Low On-Resistance Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free VDS (V) =30V ID = 2.2A (VGS = -10V) RDS(ON)

文件：475.86 Kbytes 页数：7 Pages

UMW

友台半导体

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：169.99 Kbytes 页数：7 Pages

IRF