HIGH-SIDE AND LOW-SIDE GATE DRIVER

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美台半导体

HIGH-SIDE AND LOW-SIDE GATE DRIVER

文件：577.59 Kbytes 页数：11 Pages

DIODES

美台半导体

HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO14

文件：687.76 Kbytes 页数：11 Pages

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美台半导体

HIGH-SIDE AND LOW-SIDE GATE DRIVER

文件：576.67 Kbytes 页数：11 Pages

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美台半导体

HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8

文件：484.59 Kbytes 页数：7 Pages

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美台半导体

HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-14

The DGD21814M is a high voltage / high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration. High-voltage processing techniques enable the DGD21814M’s highside to switch to 600V in a bootstrap operation.The DGD21814M logic inputs are compatible with standar •Floating High-side Driver in Bootstrap Operation to 600V\n•Drives Two N-Channel MOSFETs or IGBTs in a Half Bridge Configuration\n•1.9A Source / 2.3A Sink Output Current Capability\n•Outputs Tolerant to Negative Transients\n•Wide Low-side Gate Driver and Logic Supply: 10V to 20V\n•Logic Input (HIN a;

Diodes

美台半导体

HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8

The DGD2181M is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half-bridge configuration. High-voltage processing techniques enable the DGD2181M’s high-side to switch to 600V in a bootstrap operation.The DGD2181M logic inputs are compatible with standard •Floating High-side Driver in Bootstrap Operation to 600V\n•Drives Two N-Channel MOSFETs or IGBTs in a Half Bridge Configuration\n•1.9A Source / 2.3A Sink Output Current Capability\n•Outputs Tolerant to Negative Transients\n•Wide Low-side Gate Driver and Logic Supply: 10V to 20V\n•Logic Input (HIN a;

Diodes

美台半导体

Package：14-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 14SO

DIODES

美台半导体

Package：8-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 8SO

DIODES

美台半导体

Package：8-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 8SO

DIODES

美台半导体