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型号	下载订购	功能描述	制造商上传企业	LOGO
DGD2181M_V01	文件：607.2 Kbytes Page：11 Pages	HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 Features - Floating High-Side Driver in Bootstrap Operation to 600V - Drives Two N-Channel MOSFETs or IGBTs in a Half Bridge Configuration - 1.9A Source / 2.3A Sink Output Current Capability - Outputs Tolerant to Negative Transients - Wide Low-Side Gate Driver and Logic Supply: 10V to 20V - 文件：607.2 Kbytes 页数：11 Pages	DIODES 美台半导体	DIODES
DGD2181MS8-13	文件：607.2 Kbytes Page：11 Pages	丝印：DGD2181M；Package：SO-8；HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 Features - Floating High-Side Driver in Bootstrap Operation to 600V - Drives Two N-Channel MOSFETs or IGBTs in a Half Bridge Configuration - 1.9A Source / 2.3A Sink Output Current Capability - Outputs Tolerant to Negative Transients - Wide Low-Side Gate Driver and Logic Supply: 10V to 20V - 文件：607.2 Kbytes 页数：11 Pages	DIODES 美台半导体	DIODES
DGD21844M	文件：872.2 Kbytes Page：12 Pages	HALF-BRIDGE GATE DRIVER IN SO-14 Features - Floating High-Side Driver in Bootstrap Operation to 600V - Drives Two N-Channel MOSFETs or IGBTs in Half Bridge Configuration - 1.9A Source / 2.3A Sink Output Current Capability - Outputs Tolerant to Negative Transients - Programmable Deadtime to Protect MOSFETs - Wide Low-Side Ga 文件：872.2 Kbytes 页数：12 Pages	DIODES 美台半导体	DIODES
DGD21844M_V01	文件：872.2 Kbytes Page：12 Pages	HALF-BRIDGE GATE DRIVER IN SO-14 Features - Floating High-Side Driver in Bootstrap Operation to 600V - Drives Two N-Channel MOSFETs or IGBTs in Half Bridge Configuration - 1.9A Source / 2.3A Sink Output Current Capability - Outputs Tolerant to Negative Transients - Programmable Deadtime to Protect MOSFETs - Wide Low-Side Ga 文件：872.2 Kbytes 页数：12 Pages	DIODES 美台半导体	DIODES
DGD21844MS14-13	文件：872.2 Kbytes Page：12 Pages	丝印：DGD21844M；Package：SO-14；HALF-BRIDGE GATE DRIVER IN SO-14 Features - Floating High-Side Driver in Bootstrap Operation to 600V - Drives Two N-Channel MOSFETs or IGBTs in Half Bridge Configuration - 1.9A Source / 2.3A Sink Output Current Capability - Outputs Tolerant to Negative Transients - Programmable Deadtime to Protect MOSFETs - Wide Low-Side Ga 文件：872.2 Kbytes 页数：12 Pages	DIODES 美台半导体	DIODES
DGD2184M	文件：673.63 Kbytes Page：12 Pages	600V HALF BRIDGE GATE DRIVER IN SO-8 Features - Floating High-Side Driver in Bootstrap Operation to 600V - Drives Two N-Channel MOSFETs or IGBTs in Half Bridge Configuration - 1.4A Source / 1.8A Sink Output Current Capability - Outputs Tolerant to Negative Transients - Internal Dead Time of 395ns to Protect MOSFETs - Wide Low-S 文件：673.63 Kbytes 页数：12 Pages	DIODES 美台半导体	DIODES
DGD2184M_V01	文件：673.63 Kbytes Page：12 Pages	600V HALF BRIDGE GATE DRIVER IN SO-8 Features - Floating High-Side Driver in Bootstrap Operation to 600V - Drives Two N-Channel MOSFETs or IGBTs in Half Bridge Configuration - 1.4A Source / 1.8A Sink Output Current Capability - Outputs Tolerant to Negative Transients - Internal Dead Time of 395ns to Protect MOSFETs - Wide Low-S 文件：673.63 Kbytes 页数：12 Pages	DIODES 美台半导体	DIODES
DGD2184MS8-13	文件：673.63 Kbytes Page：12 Pages	丝印：DGD2184M；Package：SO-8；600V HALF BRIDGE GATE DRIVER IN SO-8 Features - Floating High-Side Driver in Bootstrap Operation to 600V - Drives Two N-Channel MOSFETs or IGBTs in Half Bridge Configuration - 1.4A Source / 1.8A Sink Output Current Capability - Outputs Tolerant to Negative Transients - Internal Dead Time of 395ns to Protect MOSFETs - Wide Low-S 文件：673.63 Kbytes 页数：12 Pages	DIODES 美台半导体	DIODES
DGD21904M	文件：693.24 Kbytes Page：11 Pages	HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-14 Features - Floating High-Side Driver in Bootstrap Operation to 600V - Drives Two N-Channel MOSFETs or IGBTs in a Half Bridge Configuation - Output Drivers Capable of 4.5A/4.5A Typ. Sink/Source - Logic Input (HIN and LIN) 3.3V Capability - Schmitt Triggered Logic Inputs with Internal Pull Down 文件：693.24 Kbytes 页数：11 Pages	DIODES 美台半导体	DIODES
DGD21904MS14-13	文件：693.24 Kbytes Page：11 Pages	丝印：DGD21904M；Package：SO-14；HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-14 Features - Floating High-Side Driver in Bootstrap Operation to 600V - Drives Two N-Channel MOSFETs or IGBTs in a Half Bridge Configuation - Output Drivers Capable of 4.5A/4.5A Typ. Sink/Source - Logic Input (HIN and LIN) 3.3V Capability - Schmitt Triggered Logic Inputs with Internal Pull Down 文件：693.24 Kbytes 页数：11 Pages	DIODES 美台半导体	DIODES

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产品属性

产品编号：
SMDJ54C
制造商：
Littelfuse Inc.
类别：
电路保护 > TVS - 二极管
系列：
SMDJ
包装：
卷带（TR）
类型：
齐纳
电压 - 反向断态（典型值）：
54V
电压 - 击穿（最小值）：
56.84V
不同 Ipp 时电压 - 箝位（最大值）：
91.46V
电流 - 峰值脉冲 (10/1000µs)：
34.4A
功率 - 峰值脉冲：
3000W（3kW）
电源线路保护：
无
应用：
通用
工作温度：
-65°C ~ 150°C（TJ）
安装类型：
表面贴装型
封装/外壳：
DO-214AB，SMC
供应商器件封装：
DO-214AB（SMCJ）
描述：
TVS DIODE 54VWM 91.46VC DO214AB

供应商	型号	品牌	批号	封装	库存	备注	价格
现代芯城（深圳）科技有限公司	SMDJ54C		24+	N/A	58000	一级代理-主营优势-实惠价格-不悔选择	询价
北京京北通宇电子元件有限公司	SMDJ54C	UN SEMICONDUCTOR	24+	con	10000	查现货到京北通宇商城	询价
芯有半导体（深圳）有限公司	SMDJ54CA	CCD	08+	DO-214AB	76000	绝对全新原装强调只做全新原装现	询价
深圳冠荣电子有限公司	SMDJ54CA	SUNMATE(森美特)	2019+ROHS	SMC(DO-214AB)	66688	森美特高品质产品原装正品免费送样	询价
深圳市宝芯创电子有限公司	SMDJ54CA	BRIGHTKING/君耀	2026+	SMD	10000	正品原装,假一倍十	询价
深圳诚思涵科技有限公司	SMDJ54CA	LITTELFUSE	19+	DO-214AB	200000		询价
中天科工半导体（深圳）有限公司	SMDJ54CA-HRA	LITTELFUSE/力特	20+	DO-214ABSMC	36800	原装优势主营型号-可开原型号增税票	询价
深圳市粤骏腾电子科技有限公司	SMDJ54CA	LITTELFUSEINC	24+	NA	3000	原装现货,专业配单专家	询价
深圳市百诺芯科技有限公司	SMDJ54CA	VISHAY/威世	23+	SMC	24190	原装正品代理渠道价格优势	询价
艾睿（深圳）半导体有限公司	SMDJ54CA	LITTELFUSE/力特	2447	MINIMELF	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价

更多DGD供应商更新时间2026-3-12 11:06:00

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