SINGLE CHANNEL GATE DRIVER

Features - Floating Channel in Bootstrap Operation to 600V - Drives One N-Channel MOSFET or IGBT - Outputs Tolerant to Negative Transients - Wide Logic Supply: 10V to 20V - Schmitt Triggered Logic Input with Internal Pull Down - Undervoltage Lockout - Extended Temperature Range: -40°C to +1

文件：602.39 Kbytes 页数：11 Pages

DIODES

美台半导体

丝印：DGD2118；Package：SO-8；SINGLE CHANNEL GATE DRIVER

Features - Floating Channel in Bootstrap Operation to 600V - Drives One N-Channel MOSFET or IGBT - Outputs Tolerant to Negative Transients - Wide Logic Supply: 10V to 20V - Schmitt Triggered Logic Input with Internal Pull Down - Undervoltage Lockout - Extended Temperature Range: -40°C to +1

文件：602.39 Kbytes 页数：11 Pages

DIODES

美台半导体

3-PHASE HALF-BRIDGE GATE DRIVER IN SO-28

Features Three Floating High-Side Drivers in Bootstrap Operation to 600V 200mA Source / 350mA Sink Output Current Capability Outputs Tolerant to Negative Transients, dV/dt Immune Logic Input 3.3V Capability Internal Deadtime of 290ns to Protect MOSFETs Matched Prop Delay for All Channels Ou

文件：1.58842 Mbytes 页数：14 Pages

DIODES

美台半导体

3-PHASE HALF-BRIDGE GATE DRIVER IN SO-28

Features - Three Floating High-Side Drivers in Bootstrap Operation to 600V - 200mA Source / 350mA Sink Output Current Capability - Outputs Tolerant to Negative Transients, dV/dt Immune - Logic Input 3.3V Capability - Internal Deadtime of 290ns to Protect MOSFETs and IGBTs - Matched Prop Dela

文件：806.61 Kbytes 页数：12 Pages

DIODES

美台半导体

丝印：DGD2136M；Package：SO-28；3-PHASE HALF-BRIDGE GATE DRIVER IN SO-28

Features - Three Floating High-Side Drivers in Bootstrap Operation to 600V - 200mA Source / 350mA Sink Output Current Capability - Outputs Tolerant to Negative Transients, dV/dt Immune - Logic Input 3.3V Capability - Internal Deadtime of 290ns to Protect MOSFETs and IGBTs - Matched Prop Dela

文件：806.61 Kbytes 页数：12 Pages

DIODES

美台半导体

丝印：DGD2136；Package：SO-28；3-PHASE HALF-BRIDGE GATE DRIVER IN SO-28

Features Three Floating High-Side Drivers in Bootstrap Operation to 600V 200mA Source / 350mA Sink Output Current Capability Outputs Tolerant to Negative Transients, dV/dt Immune Logic Input 3.3V Capability Internal Deadtime of 290ns to Protect MOSFETs Matched Prop Delay for All Channels Ou

文件：1.58842 Mbytes 页数：14 Pages

DIODES

美台半导体

HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-14

Features - Floating High-Side Driver in Bootstrap Operation to 600V - Drives Two N-Channel MOSFETs or IGBTs in a Half Bridge Configuration - 1.9A Source / 2.3A Sink Output Current Capability - Outputs Tolerant to Negative Transients - Wide Low-Side Gate Driver and Logic Supply: 10V to 20V -

文件：612.72 Kbytes 页数：11 Pages

DIODES

美台半导体

HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-14

Features - Floating High-Side Driver in Bootstrap Operation to 600V - Drives Two N-Channel MOSFETs or IGBTs in a Half Bridge Configuration - 1.9A Source / 2.3A Sink Output Current Capability - Outputs Tolerant to Negative Transients - Wide Low-Side Gate Driver and Logic Supply: 10V to 20V -

文件：612.72 Kbytes 页数：11 Pages

DIODES

美台半导体

丝印：DGD21814M；Package：SO-14；HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-14

Features - Floating High-Side Driver in Bootstrap Operation to 600V - Drives Two N-Channel MOSFETs or IGBTs in a Half Bridge Configuration - 1.9A Source / 2.3A Sink Output Current Capability - Outputs Tolerant to Negative Transients - Wide Low-Side Gate Driver and Logic Supply: 10V to 20V -

文件：612.72 Kbytes 页数：11 Pages

DIODES

美台半导体

HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8

Features - Floating High-Side Driver in Bootstrap Operation to 600V - Drives Two N-Channel MOSFETs or IGBTs in a Half Bridge Configuration - 1.9A Source / 2.3A Sink Output Current Capability - Outputs Tolerant to Negative Transients - Wide Low-Side Gate Driver and Logic Supply: 10V to 20V -

文件：607.2 Kbytes 页数：11 Pages

DIODES

美台半导体