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DB105S

丝印:DB105S;Package:DBS;Bridge Rectifiers

Features UL recognition, file #E313149 Glass passivated chip junction Ideal for automated placement High surge current capabily Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件:1.025079 Mbytes 页数:3 Pages

RFE

RFE international

DB105S

丝印:DB105S;Package:DFS;Silicon Bridge Rectifiers

FEATURES ● Rating to 1000V PRVP ● Surge overload rating to 30 Amperes peak ● Ideal for printed circuit board ● Reliable low cost construction utilizing molded plastic technique results in inexpensive product ● Lead solderable per MIL-STD-202 method 208 ● Glass passivated chip junctions ● Pl

文件:818.8 Kbytes 页数:4 Pages

BILIN

银河微电

DB106

丝印:DB106;Package:DFM;Silicon Bridge Rectifiers

BREAKDOWN VOLTAGE: 6.8 --- 200 V PEAK PULSE POWER: 1500 W FEATURES ◇ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◇ Glass passivated junction ◇ 1500W peak pulse power capability with a 10/1000μs waveform, repetition rate (duty cycle): 0.05 ◇ Excellent clam

文件:784.05 Kbytes 页数:4 Pages

BILIN

银河微电

DB106

丝印:DB106;Package:DB;Bridge Rectifiers

UL recognition, file #E313149 Glass passivated chip junction High surge current capabilty Solder dip 275 °C max. 7 s, per JESD 22-8106

文件:1.00738 Mbytes 页数:3 Pages

RFE

RFE international

DB106GS

丝印:DB106GS;Package:DB-1S;DBS Plastic-Encapsulate Bridge Rectifier

●IF(AV) 1A ● 50V-1000V ●Hig h surge current capability Applications ● Features VRRM Glass passivated chip rpose 1 phase B ridge rectifier applications General pu

文件:1.12543 Mbytes 页数:3 Pages

DGNJDZ

南晶电子

DB106S

丝印:DB106S;Package:DBS;Bridge Rectifiers

Features UL recognition, file #E313149 Glass passivated chip junction Ideal for automated placement High surge current capabily Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件:1.025079 Mbytes 页数:3 Pages

RFE

RFE international

DB106S

丝印:DB106S;Package:DFS;Silicon Bridge Rectifiers

FEATURES ● Rating to 1000V PRVP ● Surge overload rating to 30 Amperes peak ● Ideal for printed circuit board ● Reliable low cost construction utilizing molded plastic technique results in inexpensive product ● Lead solderable per MIL-STD-202 method 208 ● Glass passivated chip junctions ● Pl

文件:818.8 Kbytes 页数:4 Pages

BILIN

银河微电

DB107

丝印:DB107;Package:DFM;Silicon Bridge Rectifiers

BREAKDOWN VOLTAGE: 6.8 --- 200 V PEAK PULSE POWER: 1500 W FEATURES ◇ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◇ Glass passivated junction ◇ 1500W peak pulse power capability with a 10/1000μs waveform, repetition rate (duty cycle): 0.05 ◇ Excellent clam

文件:784.05 Kbytes 页数:4 Pages

BILIN

银河微电

DB107

丝印:DB107;Package:DB;Bridge Rectifiers

UL recognition, file #E313149 Glass passivated chip junction High surge current capabilty Solder dip 275 °C max. 7 s, per JESD 22-8106

文件:1.00738 Mbytes 页数:3 Pages

RFE

RFE international

DB107GS

丝印:DB107GS;Package:DB-1S;DBS Plastic-Encapsulate Bridge Rectifier

●IF(AV) 1A ● 50V-1000V ●Hig h surge current capability Applications ● Features VRRM Glass passivated chip rpose 1 phase B ridge rectifier applications General pu

文件:1.12543 Mbytes 页数:3 Pages

DGNJDZ

南晶电子

产品属性

  • 产品编号:

    DB1

  • 制造商:

    Carlo Gavazzi Inc.

  • 类别:

    传感器,变送器 > 配件

  • 包装:

  • 配件类型:

    安装支架

  • 描述:

    BRACKET 30 MM

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更多DB1供应商 更新时间2024-3-26 15:06:00