首页 >D9N10>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
POWERMOSFET9AMPS,100VOLTS | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
POWERMOSFET9AMPS,100VOLTS | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TMOSPOWERFET9.0AMPERES100VOLTSRDS(on)=0.25OHM TMOSE-FETPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoveryt | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=7A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,p | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
100VN-ChannelMOSFET Features RDS(ON),VGS@10V,ID@4.5A | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
100VN-ChannelMOSFET | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR FEATURESSUMMARY ■TYPICALRDS(on)=0.23Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUGH-HOLEIPAK(TO-251)POWERPACKAG | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-CHANNEL100V-0.23ohm-9ADPAK/IPAKPOWERMOSTRANSISTOR FEATURESSUMMARY ■TYPICALRDS(on)=0.23Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUGH-HOLEIPAK(TO-251)POWERPACKAG | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-CHANNEL100V-0.22ohm-9AIPAK/DPAKPOWERMOSTRANSISTOR N-CHANNEL100V-0.22Ω-9AIPAK/DPAKPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.22Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■HIGHdV/dtRUGGEDNESS ■APPLICATIONORIENTEDCHARACTER | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-channelEnhancedmodeTO-252MOSFET | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER |
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