丝印：D9N10；Package：IPAK；N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR

FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.23 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAG

文件：278.05 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：D9N10；Package：DPAK；N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR

FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.23 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAG

文件：278.05 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：D9N10A；Package：TO-252AA；100V N-Channel MOSFET

Features  RDS(ON), VGS@10V,ID@4.5A

文件：457.27 Kbytes 页数：8 Pages

PANJIT

強茂