丝印：D88；Package：SOT-23；SMALL SIGNAL SCHOTTKY DIODE

Description The BAT54 series uses 40 V Schottky barrier diodes packaged in SOD- 23, SOD-323, SOD-523, SOT-23, SOT-323, or SOT-666. Features ■ Low conduction and reverse losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ Extremely fast switching ■ Surface mo

文件：83.52 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

丝印：D88；Package：SOT-23；Small signal Schottky diodes

Description The BAT54 series uses 40 V Schottky barrier diodes packaged in SOD- 23, SOD-323, SOD-523, SOT-23, SOT-323, or SOT-666. Features ■ Low conduction and reverse losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ Extremely fast switching ■ Surface mo

文件：158.85 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：D88；Package：SOT-23；Small signal Schottky diodes

文件：163.06 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：D880；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES Low Frequency Power Amplifier Complement to 2SB834

文件：1.35606 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：D882；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES Power Dissipation

文件：1.48515 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：D886；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Low Voltage High Current

文件：999.88 Kbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：D886；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Low Voltage High Current

文件：999.88 Kbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：D882；Package：SOT-223；SOT-223 Plastic-Encapsulate Transistors

Features Power Dissipation:1.5W Low Collector-emitter Saturation Voltage

文件：1.17554 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：D882H；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURE Low VCE(sat) Large current capacity

文件：1.76221 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：D882H；Package：SOT-89-3L；TRANSISTOR (NPN)

FEATURE Low VCE(sat) Large current capacity

文件：728.77 Kbytes 页数：4 Pages

SY

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