高压MOSFET

Jingdao

晶导

0.4A, 600V N-CHANNEL POWER MOSFET

The UTC D4N60-KW is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supp • RDS(ON) < 21Ω @ VGS = 10 V, ID = 0.2A \n• Avalanche Energy Specified \n• Improved dv/dt Capability, High Ruggedness;

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

General Description DG4N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The

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600V N-Channel Power MOSFET

文件：2.51249 Mbytes 页数：10 Pages

DYELEC

迪一电子

600V N-Channel Power MOSFET

文件：2.51249 Mbytes 页数：10 Pages

DYELEC

迪一电子