丝印：E4N60；Package：TO-263；4A 600V N-channel Enhancement Mode Power MOSFET

Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. Features ● Fast Switching ● ESD Improved Capability ●

文件：1.3059 Mbytes 页数：11 Pages

WXDH

东海半导体

丝印：D4N60；Package：TO-252；4A 600V N-channel Enhancement Mode Power MOSFET

Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. Features ● Fast Switching ● ESD Improved Capability ●

文件：1.3059 Mbytes 页数：11 Pages

WXDH

东海半导体