D44H11

isc Silicon NPN Power Transistor

DESCRIPTION •LowCollector-EmitterSaturationVoltage:VCE(sat)=1.0V(Max)@IC=8A •FastSwitchingSpeeds •ComplementtoTypeD45H11 •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Designedforgeneralpurposepoweramplificationands

D44H11

COMPLEMENTARY SILICON POWER TRANSISTORS

10AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS30-80VOLTS50WATTS D44H,D44H1,D44H10,D44H11,D44H2,D44H4,D44H5,D44H7,D44H8-->NPN D45H,D45H1,D45H10,D45H11,D45H2,D45H4,D45H5,D45H7,D45H8-->PNP

D44H11E3

Low Vcesat NPN Epitaxial Planar Transistor

Features •LowVCE(sat) •HighBVCEO •Excellentcurrentgaincharacteristics

D44H11FP

Low Vcesat NPN Epitaxial Planar Transistor

Features •LowVCE(sat) •HighBVCEO •Excellentcurrentgaincharacteristics •Pb-freepackage

D44H11FP

Marking：D44H11FP；Package：TO-220FP；Complementary power transistors

Description TheselowvoltagetransistorsarehousedinfullyisolatedTO-220FPpackagesandformacomplementarypair.Theyaremanufacturedinmultiepitaxialplanartechnologyforgeneralpurposeinlinearandswitchingapplications. Features ■Lowcollector-emittersaturationvoltage ■Fas

D44H11J3

Low Vcesat NPN Epitaxial Planar Transistor

Features •LowVCE(sat) •HighBVCEO •Excellentcurrentgaincharacteristics

D44H10

10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 60,80 VOLTS

D44H10

Silicon NPN Power Transistors

D44H10

Silicon NPN Power Transistors

D44H10

Silicon NPN Power Transistors