High Current Glass Passivated Molding Single-Phase Bridge Rectifier

文件：293.77 Kbytes 页数：3 Pages

LRC

乐山无线电

Bridge Diodes 800V, 35A

文件：1.75374 Mbytes 页数：7 Pages

SHINDENGEN

丝印：D35N06A；Package：TO-252AA；60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：801.72 Kbytes 页数：8 Pages

PANJIT

強茂

丝印：D35N06A；Package：TO-252AA；60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V,ID@20A

文件：446.11 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：D35P03；Package：TO-252AA；30V P-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@-10V,ID@-8A

文件：446.13 Kbytes 页数：8 Pages

PANJIT

強茂

丝印：D35NF06L；Package：DPAK；N-channel 60 V, 0.014 Ω, 35 A STripFET™ II Power MOSFET in a DPAK package

Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters

文件：650.7 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：D35P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

文件：441.52 Kbytes 页数：5 Pages

KERSEMI

丝印：D35P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

文件：656.94 Kbytes 页数：5 Pages

HUILIDAShenzhen hui lida electronic co., LTD

汇利达广东汇利达半导体有限公司

Rectifier Diodes

\n优势:\n• 可靠性高，可以大幅度地减少维护并减少停机\n• 通过串联和并联的特殊设计，轻松实现系统功率调节;

Infineon

英飞凌

Rectifier Diodes

\n优势:\n• 可靠性高，可以大幅度地减少维护并减少停机\n• 通过串联和并联的特殊设计，轻松实现系统功率调节;

Infineon

英飞凌