STD35NF06LT4中文资料意法半导体数据手册PDF规格书

描述 Description

This Power MOSFET has been developed using

STMicroelectronics’ unique STripFET process,

which is specifically designed to minimize input

capacitance and gate charge. This renders the

device suitable for use as primary switch in

advanced high-efficiency isolated DC-DC

converters for telecom and computer applications,

and applications with low gate charge driving

requirements.

特性 Features

■ Low threshold drive

■ Gate charge minimized

Applications

■ Switching application