Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Very low C(rss)\n• Simple bias circuits\n• Low noise\n• High gain - 10 dB minimum;

TT Electronics

METAL GATE RF SILICON FET

文件：16.239 Kbytes 页数：2 Pages

SEME-LAB

P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR짰 SUPER BARRIER RECTIFIER

文件：138.47 Kbytes 页数：6 Pages

DIODES

美台半导体

P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR

文件：125.7 Kbytes 页数：6 Pages

DIODES

美台半导体

Low-Jitter I2C/SPI Programmable LVPECL Oscillator

文件：664.48 Kbytes 页数：5 Pages

Micrel

麦瑞半导体