METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 1 MHz to 1 GH

文件：20.24 Kbytes 页数：2 Pages

SEME-LAB

OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Very low C(rss)\n• Simple bias cicuits\n• Low noise\n• High gain - 13 dB minimum;

TT Electronics

HIGH PERFORMANCE FRACTIONAL-N SYNTHESIZER WITH INTEGRATED RF MIXER

文件：1.64769 Mbytes 页数：36 Pages

RFMD

威讯联合

HIGH PERFORMANCE FRACTIONAL-N SYNTHESIZER WITH INTEGRATED RF MIXER

文件：1.64769 Mbytes 页数：36 Pages

RFMD

威讯联合

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features PCB Footprint of 4mm2 Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Maximum Height Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control

文件：579.24 Kbytes 页数：10 Pages

DIODES

美台半导体