GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 45W - 28V - 500MHz PUSH-PULL

FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 50 MHz to 1 GHz

文件：21.55 Kbytes 页数：2 Pages

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METAL GATE RF SILICON FET

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SEME-LAB

Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Very low C(rss)\n• Simple bias cicuits\n• Low noise\n• High gain - 13 dB minimum;

TT Electronics

CMOS Amplifier

Features  Rail-to-rail input and output  ±1 mV typical offset (VOS)  VOSMAX specificity: ±5 mV  Low distortion  Gain bandwidth product: 3 MHz  Wide supply range: 2.5 V to 5.5 V  190μA/Amplifier typical supply current  Slew rate: 1.7 V/μs  Small size packaging best for portable a

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NTC Diode Thermometrics Thermistors A range of NTC chip thermistors in DO-35 style glass package (diode outline) with axial solder-coated copper-clad steel wires. • Designed for accurate temperature measurement, control and compensation • Tight tolerances on resistance and B value • Opera

文件：96.29 Kbytes 页数：8 Pages

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SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET

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美台半导体