METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 400MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from DC to 500 MHz

文件：17.5 Kbytes 页数：2 Pages

SEME-LAB

Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Simple bias cicuits\n• Low noise\n• High gain - 13 dB minimum;

TT Electronics

Halogen and Antimony Free. ?쏥reen??Device (Note 3)

文件：460.13 Kbytes 页数：7 Pages

DIODES

美台半导体

Rectifier Diode

FEATURES ■ Double Side Cooling ■ High Surge Capability APPLICATIONS ■ Rectification ■ Freewheel Diode ■ DC Motor Control ■ Power Supplies ■ Welding ■ Battery Chargers

文件：91.92 Kbytes 页数：7 Pages

Dynex

SURFACE MOUNT 10BASE-T INTERFACE MODULES

文件：554 Kbytes 页数：4 Pages

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