METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 50 MHz to 2 G

文件：47.45 Kbytes 页数：4 Pages

SEME-LAB

Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Simple bias cicuits\n• Low noise\n• High gain - 13 dB minimum;

TT Electronics

256KB Asynchronous Secondary Cache Module for PowerPC

The MPC2001 is designed to provide asynchronous 256KB L2 cache for the PowerPC 60x processors. The module is configured as 32K x 64 bits in a 136 pin dual readout single inline memory module (DIMM). The module uses eight of Motorola’s MCM6206 CMOS RAMs. Eight write enables are provided for byte w

文件：88.31 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

900 MHz DOWNCONVERTER LNA/MIXER SILICON MONOLITHIC INTEGRATED CIRCUIT

The MRFIC2001 is an integrated downconverter designed for receivers operating in the 800 MHz to 1.0 GHz frequency range. The design utilizes Motorola’s advanced MOSAIC 3 silicon bipolar RF process to yield superior performance in a cost effective monolithic device. Applications for the MRFIC2001 i

文件：191.07 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Power Transistors Designed primarily for large–signal output and driver amplifier stages in the 1.0 to 2.3 GHz frequency range. • Designed for Class B or C, Common Base Power Amplifiers • Specified 28 Volt, 2.0 GHz Characteristics: Output Power — 1.0 to 20 Watts P

文件：102.85 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉