丝印：D16N06A；Package：TO-252AA；60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V,ID@8A

文件：464.2 Kbytes 页数：8 Pages

PANJIT

強茂

丝印：D16N06A；Package：TO-252AA；60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@8A

文件：431.14 Kbytes 页数：7 Pages

PANJIT

強茂

16A, 60V, 0.047 Ohm, N-Channel Power MOSFET

Description These N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as

文件：85.03 Kbytes 页数：7 Pages

INTERSIL

16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. Features • 16A, 60V • rDS(ON) = 0.047Ω • Temperature Compensati

文件：342.79 Kbytes 页数：7 Pages

INTERSIL

16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. Features • 16A, 60V • rDS(ON) = 0.047Ω • Temperature Compensati

文件：193.57 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体