Airfast RF Power GaN Transistor

This 27 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 3800 MHz. Features • High terminal impedances for optimal broadband performance • Designed for low complexity linearization systems • Universal broadband driver •

文件：207.48 Kbytes 页数：13 Pages

恩XP

Full blocking capability 50/60Hz over a wide temperature range

Key Parameters    VRRM 6800 V    IFAVM 1590 A (TC=100 °C)    IFSM 3570A (T 28000 A C=55°C)    VT0 0,75 V    rT 0,42 mΩ    RthJC 14 K/kW    Clamping Force 15 … 36 kN    Max. Diameter 76 mm    Contact Diameter 50 mm    Height 26 mm Features • Full blocking capability 50/60Hz over a wide

文件：245.11 Kbytes 页数：9 Pages

INFINEON

英飞凌

Rectifier Diode

Rectifier Diode

文件：217.66 Kbytes 页数：8 Pages

EUPEC

Complementary pair with 2SB1055

Si NPN Triple Diffused Planar High Power Amplifier Complementary pair with 2SB1055 Features ● Exceptionally good linearity of hFE ● Wide area of safe operation (ASO) ● High fT ● Full Pack package for simplified mounting onlyu by a screw, requires no insulator.

文件：39.46 Kbytes 页数：1 Pages

PANASONIC

松下

PolySwitch짰 PTC Devices

PolySwitch Resettable Devices Radial-leaded Devices Features • Broadest range of radial-leaded resettable devices available in the industry • Current ratings from 50mA to 15A • Voltage ratings from 6V (computer and electronic applications) to 265VAC line voltage applications • Agency recogni

文件：66.98 Kbytes 页数：1 Pages

MACOM

RAYCHEM Tubing Products

文件：1.40301 Mbytes 页数：42 Pages

MACOM

Rectifier Diodes

\n优势:\n• 可靠性高，可以大幅度地减少维护并减少停机\n• 通过串联和并联的特殊设计，轻松实现系统功率调节;

Infineon

英飞凌

Rectifier Diode

Infineon

英飞凌

Package：DO-200AC，K-PUK；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 5.8KV 2200A

INFINEON

英飞凌

Package：DO-200AC，K-PUK；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 6KV 2200A

INFINEON

英飞凌