OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Simple bias circuits\n• Low noise\n• High gain - 10 dB minimum;

TT Electronics

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 12.5V - 175MHz SINGLE ENDED

文件：60.86 Kbytes 页数：4 Pages

SEME-LAB

10-Bit, 12-Bit Binary Multiplying D/A Converter

文件：264.99 Kbytes 页数：14 Pages

NSC

国半

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

文件：37.76 Kbytes 页数：2 Pages

POLYFET

Integrated Circuit Stereo Preamp

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Maximum Supply Voltage, VCCmax 25V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector–Base Voltage (Q1), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . .

文件：21.36 Kbytes 页数：2 Pages

NTE