D1065C5

5t h Generation thinQ!TM 650V SiC Schottky Diode

1Description Features Revolutionarysemiconductormaterial-SiliconCarbide Benchmarkswitchingbehavior Noreverserecovery/Noforwardrecovery Temperatureindependentswitchingbehavior Highsurgecurrentcapability Pb-freeleadplating;RoHScompliant Qualifiedaccordin

AD1065C5

650V/10ASiliconCarbideSchottkyDiodeinTO247-3CoolSiC™AutomotiveSchottkyDiode650VG5

Features Revolutionarysemiconductormaterial-SiliconCarbide Benchmarkswitchingbehavior Noreverserecovery/Noforwardrecovery Temperatureindependentswitchingbehavior Highsurgecurrentcapability Pb-freeleadplating;RoHScompliant JunctionTemperaturerangefrom-