5t h Generation thinQ!TM 650V SiC Schottky Diode

1 Description Features  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant  Qualified accordin

文件：1.1747 Mbytes 页数：11 Pages

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英飞凌

丝印：D1065C5；Package：PG-TO247-3；5t h Generation thinQ!TM 650V SiC Schottky Diode

1 Description Features  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant  Qualified accordin

文件：1.1747 Mbytes 页数：11 Pages

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英飞凌

650V/10A Silicon Carbide Schottky Diode in TO247-3 CoolSiC™ Automotive Schottky Diode 650V G5

Features  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant  Junction Temperature range from -

文件：844.27 Kbytes 页数：11 Pages

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英飞凌

ITT
N/A

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上传：深圳市新思迈科技有限公司

DIODES
SOT323

DIODES

美台半导体

上传：深圳市华康联电子科技有限公司（销售一部）