POWER TRANSISTORS(12A,140V,100W)

文件：130.41 Kbytes 页数：3 Pages

MOSPEC

统懋

Silicon NPN Power Transistors

DESCRIPTION • Complement to type 2SB817 • With TO-3PN package APPLICATIONS • Power amplification • Low frequency and audio band

文件：187.29 Kbytes 页数：4 Pages

ISC

无锡固电

Complementary Silicon Power Ttransistors

DESCRIPTION It is intented for use in power ampli fier and swi tchi ng appl ications.

文件：70.65 Kbytes 页数：1 Pages

TGS

NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER ● High Current Capability ● High Power Dissipation ● Complementary to 2SB817

文件：48.78 Kbytes 页数：1 Pages

WINGS

永盛电子

Power supply

Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Features ■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized at 125 °C Ap

文件：190.98 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET This 38 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1995 MHz. Features  Designed for wide instantaneous bandwidth ap

文件：502.63 Kbytes 页数：18 Pages

恩XP

140V / 12A, AF 80W Output Applications

Features • Large current capacitance. • Wide ASO and high durability against breakdown. • Adoption of MBIT process.

文件：450.72 Kbytes 页数：2 Pages

SANYO

三洋

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) • Good Linearity of hFE • High Current Capability • Wide Area of Safe Operation • Complement to Type 2SB817E • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

文件：290.86 Kbytes 页数：2 Pages

ISC

无锡固电

SIL 3 Digital Output Driver, NE Loads, Loop Powered, DIN-Rail Model D1048S

Features: SIL 3 according to IEC 61508:2010 Ed. 2 for lifetime = 20 years. PFDavg (1 year) 0.00 E+00, SFF 100 . SIL 3 Systematic capability Output to Zone 0 (Zone 20), Division 1, installation in Zone 2, Division 2. Loop powered for NE loads. Short and open circuit line diagnostic monitor

文件：267.35 Kbytes 页数：2 Pages

GMI

SIL 3 Digital Output Driver, NE Loads, Loop Powered, DIN-Rail Model D1048S

Features: SIL 3 according to IEC 61508:2010 Ed. 2 for lifetime = 20 years. PFDavg (1 year) 0.00 E+00, SFF 100 . SIL 3 Systematic capability Output to Zone 0 (Zone 20), Division 1, installation in Zone 2, Division 2. Loop powered for NE loads. Short and open circuit line diagnostic monitor

文件：267.35 Kbytes 页数：2 Pages

GMI