140V/12A AF 60W Output Applications

Features • Capable of being mounted easily because of one point fixing type plastic molded package (Inter changeable with TO-3). • Wide ASO because of on-chip ballast resistance. • Good depenedence of fT on current and excellent high frequency responce. The descriptions in pare

文件：127.42 Kbytes 页数：4 Pages

SANYO

三洋

POWER TRANSISTORS(12A,140V,100W)

文件：130.41 Kbytes 页数：3 Pages

MOSPEC

统懋

TO-3P Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Large current capacitance ● Complementary PNP Types:2SB817 APPLICATIONS ● High audio frequency output stage ● Power amplifier

文件：740.44 Kbytes 页数：4 Pages

JIANGSU

长电科技

Silicon NPN Power Transistors

DESCRIPTION • Complement to type 2SB817 • With TO-3PN package APPLICATIONS • Power amplification • Low frequency and audio band

文件：199.38 Kbytes 页数：4 Pages

SAVANTIC

Complementary Silicon Power Ttransistors

DESCRIPTION It is intented for use in power ampli fier and swi tchi ng appl ications.

文件：70.65 Kbytes 页数：1 Pages

TGS

NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER ● High Current Capability ● High Power Dissipation ● Complementary to 2SB817

文件：48.78 Kbytes 页数：1 Pages

WINGS

永盛电子

Power supply

Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Features ■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized at 125 °C Ap

文件：190.98 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Silicon NPN transistor in a TO-3P Plastic Package.

Descriptions Silicon NPN transistor in a TO-3P Plastic Package. Features For 60W audio frequency amplifier output stage, Complementary to 2SB817. Applications Designed for use in audio frequency amplifier.

文件：1.27404 Mbytes 页数：7 Pages

FOSHAN

蓝箭电子

Silicon NPN Power Transistors

DESCRIPTION • Complement to type 2SB817 • With TO-3PN package APPLICATIONS • Power amplification • Low frequency and audio band

文件：187.29 Kbytes 页数：4 Pages

ISC

无锡固电

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET This 38 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1995 MHz. Features  Designed for wide instantaneous bandwidth ap

文件：502.63 Kbytes 页数：18 Pages

恩XP