METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 50W – 28V – 1GHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 7.5 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 400 MHz to

文件：17.14 Kbytes 页数：2 Pages

SEME-LAB

SIL 2 Analog Signal Converter and Trip Amplifiers DIN-Rail Model D1053S

Features: SIL 2 according to IEC 61508, IEC 61511 using analog output or trip amplifiers for Tproof = 2 / 4 years (10 / 20 of total SIF). PFDavg (1 year) 4.16 E-04, SFF 80 using analog output. PFDavg (1 year) 4.11 E-04, SFF 82 using trip amplifiers. Input from Zone 0 (Zone 20), Division

文件：397.11 Kbytes 页数：4 Pages

GMI

SIL 2 Analog Signal Converter and Trip Amplifiers DIN-Rail Model D1053S

Features: SIL 2 according to IEC 61508, IEC 61511 using analog output or trip amplifiers for Tproof = 2 / 4 years (10 / 20 of total SIF). PFDavg (1 year) 4.16 E-04, SFF 80 using analog output. PFDavg (1 year) 4.11 E-04, SFF 82 using trip amplifiers. Input from Zone 0 (Zone 20), Division

文件：397.11 Kbytes 页数：4 Pages

GMI

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 50W – 28V – 1GHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 7.5 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 400 MHz to

文件：17.14 Kbytes 页数：2 Pages

SEME-LAB

Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Very low C(rss)\n• Simple bias cicuits\n• Low noise\n• High gain - 7.5 dB minimum;

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