METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMM

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SEME-LAB

Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Very low C(rss)\n• Simple bias cicuits\n• Low noise\n• High gain - 13 dB minimum;

TT Electronics

UHF POWER TRANSISTOR

The RF Line UHF Power Transistor . . . designed primarily for wideband, large–signal output and driver amplifier stages to 1.0 GHz. • Designed for Class A Linear Power Amplifiers • Specified 25 Volt, 900 MHz Characteristics: Output Power — 3.0 Watts Power Gain — 7.5 dB Min, Class AB •

文件：54.46 Kbytes 页数：2 Pages

MOTOROLA

摩托罗拉

LINEAR BUILDING BLOCK - LOW POWER COMPARATOR AND VOLTAGE REFERENCE

GENERAL DESCRIPTION The TC1031 is a low power, complimentary output comparator plus voltage reference designed specifically for low power applications. The TC1031 is designed for operation from a single supply, however, operation from dual supplies is also possible, and the power supply current

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TELCOM

LINEAR BUILDING BLOCK - LOW POWER COMPARATOR AND VOLTAGE REFERENCE

GENERAL DESCRIPTION The TC1031 is a low power, complimentary output comparator plus voltage reference designed specifically for low power applications. The TC1031 is designed for operation from a single supply, however, operation from dual supplies is also possible, and the power supply current

文件：22.54 Kbytes 页数：1 Pages

TELCOM