METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMM

文件：15.39 Kbytes 页数：2 Pages

SEME-LAB

SIL 2 Switch/Proximity Detector Repeater Transistor Output DIN-Rail Models D1031D, D1031Q

Features SIL 2 according to IEC 61508:2010 (Route 2H) with Tproof = 7 / 10 years (≤10 / >10 of total SIF). SC2: Systematic Capability SIL2. Input from Zone 0 (Zone 20), Division 1, installation in Zone 2, Division 2. NO/NC contact/proximity Detector Input. Four opto isolated volt

文件：307.06 Kbytes 页数：2 Pages

GMI

SIL 2 Switch/Proximity Detector Repeater Transistor Output DIN-Rail Models D1031D, D1031Q

Features SIL 2 according to IEC 61508:2010 (Route 2H) with Tproof = 7 / 10 years (≤10 / >10 of total SIF). SC2: Systematic Capability SIL2. Input from Zone 0 (Zone 20), Division 1, installation in Zone 2, Division 2. NO/NC contact/proximity Detector Input. Four opto isolated volt

文件：307.06 Kbytes 页数：2 Pages

GMI

SIL 2 Switch/Proximity Detector Repeater Transistor Output DIN-Rail Models D1031D, D1031Q

Features SIL 2 according to IEC 61508:2010 (Route 2H) with Tproof = 7 / 10 years (≤10 / >10 of total SIF). SC2: Systematic Capability SIL2. Input from Zone 0 (Zone 20), Division 1, installation in Zone 2, Division 2. NO/NC contact/proximity Detector Input. Four opto isolated volt

文件：307.06 Kbytes 页数：2 Pages

GMI

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMM

文件：15.39 Kbytes 页数：2 Pages

SEME-LAB

Full blocking capability 50/60Hz over a wide temperature range

文件：357.7 Kbytes 页数：11 Pages

Infineon

英飞凌

Fast Hard Drive Diod e

文件：253.56 Kbytes 页数：10 Pages

eupec

二极管盘

\n优势:\n• 用于 IGCT/Presspack IGBT 的飞轮或夹紧二极管\n• 可实现与 IGCT/Presspack IGBT 的低感应连接\n• 低通态损耗下的极软开关行为;

Infineon

英飞凌

Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Very low C(rss)\n• Simple bias cicuits\n• Low noise\n• High gain - 13 dB minimum;

TT Electronics

Fast Hard Drive Diod e

Infineon

英飞凌