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型号	下载订购	功能描述	制造商上传企业	LOGO
CY7C1360A-150AJI	文件：558.86 Kbytes Page：28 Pages	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte 文件：558.86 Kbytes 页数：28 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360A-150BGC	文件：558.86 Kbytes Page：28 Pages	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte 文件：558.86 Kbytes 页数：28 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360A-150BGI	文件：558.86 Kbytes Page：28 Pages	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte 文件：558.86 Kbytes 页数：28 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360A-166AC	文件：558.86 Kbytes Page：28 Pages	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte 文件：558.86 Kbytes 页数：28 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360A-166AI	文件：558.86 Kbytes Page：28 Pages	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte 文件：558.86 Kbytes 页数：28 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360A-166AJC	文件：558.86 Kbytes Page：28 Pages	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte 文件：558.86 Kbytes 页数：28 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360A-166AJI	文件：558.86 Kbytes Page：28 Pages	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte 文件：558.86 Kbytes 页数：28 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360A-166BGC	文件：558.86 Kbytes Page：28 Pages	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte 文件：558.86 Kbytes 页数：28 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360A-166BGI	文件：558.86 Kbytes Page：28 Pages	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte 文件：558.86 Kbytes 页数：28 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1360A-200AC	文件：558.86 Kbytes Page：28 Pages	256K x 36/512K x 18 Synchronous Pipelined Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1360A and CY7C1362A SRAMs inte 文件：558.86 Kbytes 页数：28 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress

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技术参数

Automotive Qualified：
N
Burst Length (Words)：
0
Density (Kb)：
9216
Density (Mb)：
9
Frequency (MHz)：
166
Max. Operating Temp. (°C)：
70
Max. Operating VCCQ (V)：
3.60
Max. Operating Voltage (V)：
3.63
Min. Operating Temp. (°C)：
0
Min. Operating VCCQ (V)：
2.40
Min. Operating Voltage (V)：
3.14
Organization (X x Y)：
256Kb x 36
Tape & Reel：
Y
Temp. Classification：
Commercial

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市毅创腾电子科技有限公司	CY7C136	CY	23+	PLCC52	5700	绝对全新原装!现货!特价!请放心订购!	询价
深圳市欧立现代科技有限公司	CY7C136	CYPRESS	24+	PLCC	3500	原装现货,可开13%税票	询价
深圳市卓越微芯电子有限公司	CY7C136	CY	25+	PLCC	4500	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市佳鑫美电子科技有限公司	CY7C136		25+	PLCC52	3629	原装优势!房间现货!欢迎来电!	询价
贸泽芯城（深圳）电子科技有限公司	CY7C136	CYPRESS/赛普拉斯	23+	PLCC	10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市宏捷佳电子科技有限公司	CY7C136	CYPRESS	2023+	PLCC	50000	原装现货	询价
深圳市安富世纪电子有限公司	CY7C136		23+	原厂正规渠道	5000	专注配单,只做原装进口现货	询价
深圳市佳杰伟业科技有限公司	CY7C136	CYPRESS	2406+	QFP	3266	优势代理渠道原装现货可全系列订货	询价
万三科技(深圳)有限公司	CY7C136	Cypress(赛普拉斯)	25+	封装	500000	源自原厂成本,高价回收工厂呆滞	询价
深圳市福田区绿盛电子商行	CY7C1366C-166AXC	CYPRESS	2015+	QFP	19889	一级代理原装现货,特价热卖!	询价

更多CY7C136供应商更新时间2025-12-8 16:32:00

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