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CY7C1318CV18

18-Mbit DDR-II SRAM 2-Word Burst Architecture

Functional Description The CY7C1316CV18, CY7C1916CV18, CY7C1318CV18, and CY7C1320CV18 are 1.8V Synchronous Pipelined SRAMs equipped with DDR-II architecture. The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a one-bit burst counter. Addresses for read and wr

文件:662.26 Kbytes 页数:29 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1318CV18

18-Mbit DDR II SRAM 2-Word Burst Architecture

文件:1.24187 Mbytes 页数:29 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1318CV18-167BZC

18-Mbit DDR-II SRAM 2-Word Burst Architecture

Functional Description The CY7C1316CV18, CY7C1916CV18, CY7C1318CV18, and CY7C1320CV18 are 1.8V Synchronous Pipelined SRAMs equipped with DDR-II architecture. The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a one-bit burst counter. Addresses for read and wr

文件:662.26 Kbytes 页数:29 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1318CV18-167BZI

18-Mbit DDR-II SRAM 2-Word Burst Architecture

Functional Description The CY7C1316CV18, CY7C1916CV18, CY7C1318CV18, and CY7C1320CV18 are 1.8V Synchronous Pipelined SRAMs equipped with DDR-II architecture. The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a one-bit burst counter. Addresses for read and wr

文件:662.26 Kbytes 页数:29 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1318CV18-167BZXC

18-Mbit DDR-II SRAM 2-Word Burst Architecture

Functional Description The CY7C1316CV18, CY7C1916CV18, CY7C1318CV18, and CY7C1320CV18 are 1.8V Synchronous Pipelined SRAMs equipped with DDR-II architecture. The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a one-bit burst counter. Addresses for read and wr

文件:662.26 Kbytes 页数:29 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1318CV18-167BZXI

18-Mbit DDR-II SRAM 2-Word Burst Architecture

Functional Description The CY7C1316CV18, CY7C1916CV18, CY7C1318CV18, and CY7C1320CV18 are 1.8V Synchronous Pipelined SRAMs equipped with DDR-II architecture. The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a one-bit burst counter. Addresses for read and wr

文件:662.26 Kbytes 页数:29 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1318CV18-200BZC

18-Mbit DDR-II SRAM 2-Word Burst Architecture

Functional Description The CY7C1316CV18, CY7C1916CV18, CY7C1318CV18, and CY7C1320CV18 are 1.8V Synchronous Pipelined SRAMs equipped with DDR-II architecture. The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a one-bit burst counter. Addresses for read and wr

文件:662.26 Kbytes 页数:29 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1318CV18-200BZI

18-Mbit DDR-II SRAM 2-Word Burst Architecture

Functional Description The CY7C1316CV18, CY7C1916CV18, CY7C1318CV18, and CY7C1320CV18 are 1.8V Synchronous Pipelined SRAMs equipped with DDR-II architecture. The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a one-bit burst counter. Addresses for read and wr

文件:662.26 Kbytes 页数:29 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1318CV18-200BZXC

18-Mbit DDR-II SRAM 2-Word Burst Architecture

Functional Description The CY7C1316CV18, CY7C1916CV18, CY7C1318CV18, and CY7C1320CV18 are 1.8V Synchronous Pipelined SRAMs equipped with DDR-II architecture. The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a one-bit burst counter. Addresses for read and wr

文件:662.26 Kbytes 页数:29 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1318CV18-200BZXI

18-Mbit DDR-II SRAM 2-Word Burst Architecture

Functional Description The CY7C1316CV18, CY7C1916CV18, CY7C1318CV18, and CY7C1320CV18 are 1.8V Synchronous Pipelined SRAMs equipped with DDR-II architecture. The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a one-bit burst counter. Addresses for read and wr

文件:662.26 Kbytes 页数:29 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

技术参数

  • 存储器格式:

    SRAM

  • 技术:

    SRAM - 同步,DDR II

  • 存储容量:

    18Mb (1M x 18)

  • 时钟频率:

    167MHz

  • 存储器接口:

    并联

  • 电压 - 电源:

    1.7V ~ 1.9V

  • 工作温度:

    0°C ~ 70°C(TA)

  • 安装类型:

    表面贴装

  • 封装/外壳:

    165-LBGA

  • 供应商器件封装:

    165-FBGA(13x15)

供应商型号品牌批号封装库存备注价格
Cypress
165-FBGA
3260
Cypress一级分销,原装原盒原包装!
询价
CYPRESS
24+
BGA
90
询价
Cypress
16+
原厂封装
10000
全新原装正品,代理优势渠道供应,欢迎来电咨询
询价
CYPRESS
25+
BGA
2679
原装优势!绝对公司现货!可长期供货!
询价
Cypress
23+
165-FBGA
65600
询价
CYPRESS
20+
165FBGA
11520
特价全新原装公司现货
询价
Cypress Semiconductor Corp
21+
119-BGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
询价
Cypress Semiconductor Corp
24+
165-FBGA(13x15)
56200
一级代理/放心采购
询价
CYPRESS/赛普拉斯
23+
FBGA165
382
原装正品代理渠道价格优势
询价
CYPRESS
25+
BGA-165
1001
就找我吧!--邀您体验愉快问购元件!
询价
更多CY7C1318CV18供应商 更新时间2026-2-4 14:52:00