4-Mb (256K x 16) Static RAM

Functional Description[1] The CY62147DV18 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL™) in portable applications such as cellular te

文件：734.39 Kbytes 页数：11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (256K x 16) Static RAM

Infineon

英飞凌

4-Mb (256K x 16) Static RAM

Functional Description[1] The CY62147DV18 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL™) in portable applications such as cellular te

文件：734.39 Kbytes 页数：11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (256K x 16) Static RAM

Functional Description[1] The CY62147DV18 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL™) in portable applications such as cellular te

文件：734.39 Kbytes 页数：11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (256K x 16) Static RAM

Functional Description[1] The CY62147DV18 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL™) in portable applications such as cellular te

文件：734.39 Kbytes 页数：11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (256K x 16) Static RAM

Functional Description[1] The CY62147DV18 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL™) in portable applications such as cellular te

文件：734.39 Kbytes 页数：11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (256K x 16) Static RAM

Functional Description[1] The CY62147DV18 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL™) in portable applications such as cellular te

文件：734.39 Kbytes 页数：11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (256K x 16) Static RAM

Functional Description[1] The CY62147DV18 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL™) in portable applications such as cellular te

文件：734.39 Kbytes 页数：11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (256K x 16) Static RAM

Functional Description[1] The CY62147DV18 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL™) in portable applications such as cellular te

文件：734.39 Kbytes 页数：11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mb (256K x 16) Static RAM

Functional Description[1] The CY62147DV18 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL™) in portable applications such as cellular te

文件：734.39 Kbytes 页数：11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司