CY62147DV18L-55BVI中文资料赛普拉斯数据手册PDF规格书

Functional Description[1]

The CY62147DV18 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL™) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption.

特性 Features

• Very high speed: 55 ns and 70 ns

• Wide voltage range: 1.65V – 2.25V

• Pin-compatible with CY62147CV18

• Ultra-low active power

— Typical active current: 1 mA @ f = 1 MHz

— Typical active current: 6 mA @ f = fmax

• Ultra low standby power

• Easy memory expansion with CE, and OE features

• Automatic power-down when deselected

• CMOS for optimum speed/power

• Packages offered 48-ball BGA